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Magazine Name : Ieee Transactions On Electron Devices

Year : 1998 Volume number : 45 Issue: 03

A Stochastic Wire-Length Distributio For Gigascale Integration (Gsi)Part I Derivation And Validation (Article)
Subject: Interconnect Density Functin , Interconnect Projections , Stochastic Systems
Author: Jeffrey A. Davis      Vivek De      James D. Meindl     
page:      580 - 589
A Stochastic Wire-Length Distribution For Giascale Integration (Gsi)-Partii Applications To Clock Frequency, Power Dissipation, And Chip Size Estimaton (Article)
Subject: Average Wire Lenght , Critical Path , Power Dissiption , Distribution
Author: Jeffrey A. Davis      Vivek De      James D Meindl     
page:      590 - 597
Dram Technology Perspective For Gigabit Era (Article)
Subject: Dram , Gigabit Ethernet Spec
Author: Kinam Kim      Changha Hwang      Jong Gil Lee     
page:      598 - 608
Process Simplication In Dram Manufacturing (Article)
Subject:
Author: L. S Thakur      E-X. Ping      C. A. Jesse     
page:      609 - 619
Process Simplification In Dram Manufacturing (Article)
Subject: Process Simulation , Manufactureing
Author: R. P. S. Thakur      S. J. Deboer      C. A. Jesse     
page:      609 - 619
Process Simplification In Dram Manufacturing (Article)
Subject: Process Shift , Dram Macro
Author: R. P. S. Thakur      E-X. Ping      S. J. Deboer      C. A. Jesse      E-X. Ping     
page:      609 - 619
Technology For Advanced High-Performance Microprocessors (Article)
Subject:
Author: M T Bohr      Youssef A. Mansy     
page:      620 - 625
Technology For Advanced High-Perfoemance Microprocessors (Article)
Subject:
Author: M T Bohr      A. El-Mansy     
page:      620 - 625
Technology For Advanced High-Performance Microprocessors (Article)
Subject:
Author: M T Bohr      E. I El-Masry     
page:      620 - 625
Recent Advaces In Process Synthesis For Semiconductor Devices (Article)
Subject: Recent View , Semiconductor Devices
Author: Harold H. Hosack      Purnendu K. Mozumder      Gordon P. Pollack     
page:      626 - 633
Recent Advances In Process Synthesis For Semiconductor Devices (Article)
Subject: Recent View
Author: Hugh C. Adams      Purnendu K. Mozumder      Gordon P. Pollack     
page:      626 - 633
A New Device Design Methodology For Manufacturability (Article)
Subject:
Author: William C. Holton      Stewart C. Williams      Jye- Chyi Lu     
page:      634 - 642
Role Of Rapid Photothermal Processing In Process Integration\ (Article)
Subject: Capacitors , Gap Fill , High Dielectric Constant Material , Process Integration
Author: R Singh      Srikanth V. Nimmagadda      Kelvin F. Poole     
page:      643 - 564
Process Integration Of An Interlevel Dielectric (Ildo) Module Using A Buildin-In Reliability Approach (Article)
Subject: Cmos Memory , Gettering , Ic Fabrication Industry
Author: Ronald E. Paulsen      Carl S. Kyono      Chris Reno     
page:      655 - 664
Process Integration Of An Interlevel Dielectric (Ildo) Module Using A Building-In Reliability Approach (Article)
Subject: Cmos Memory , Eprom , Gettering , Ic Fab Facility
Author: Ronald E. Paulsen      Carl S. Kyono      Yun Wang     
page:      655 - 664
The Physical And Electrical Effects Of Metal-Fill Patterning Practices For Oxide Chemical-Mechanical Polishing Processes (Article)
Subject: Chemical-Mechanical Polishing , Design For Manufacturing , Metal-Fill
Author: Brian E. Stine      Duane S. Boning      Moorthy Muthukrishnan     
page:      665 - 679
The Physical And Electrical Effects Of Metal-Fill Patterning Practices For Oxide Chemical-Mechanical Processes (Article)
Subject: Chemical-Mechanical Polishing , Design For Manufacturing , Metal Fill
Author: Brian E. Stine      Duane S. Boning      Michael Berman     
page:      665 - 679
Making Silicon Nitride Film A Viable Gate Dielectric (Article)
Subject: Dielectric Films , Mos Capacitors , Mosfets , Vapor Deposition
Author: T.P Ma     
page:      680 - 690
Stidu Of The Manufacturing Feasibility Of 1.5- Nm Direct-Tunneling Gate Oxide Mosfet'S Uniformity, Reliability , And Dopant Penerration Of The Gate Oxide (Article)
Subject: Direct-Tunneling , Reliability , Mosfet , Gate Oxide
Author: Hisaya Sasaki Momose      Shinji Nakamura      Tatsuya Ohguro      H Iwai     
page:      691 - 700
Study Of The Manufacturing Feasibility Of 1.5-Nm Direct-Tunneling Gate Oxide Mosfet'S Uniformity, Reliability, And Dopant Penetration Of The Gate2245 (Article)
Subject: Direct-Lifting , Gate Capacitance , Leakage Current , Reliability
Author: Hisayo Sasaki Momose      Shinji Nakamura      Tatsuya Ohguro     
page:      691 - 700
Characteristics Of Low-Energy Bf2- Of As-Implanted Layers And Their Effect On The Electrical Performance Of 0.15-M Mosfet,S (Article)
Subject:
Author: Akio Nishida      Shin Ichiro Kimura     
page:      701 - 709
Updoped Epitaxial Si Channel N-Mosfet Grown By Uhv-Cvd With Prehating (Article)
Subject: Epitaxial Si , N-Mosfet , Sub-0.1-/M Gate
Author: Tatsuya Phguro      Naoharu Sugiyama      Masanobu Saito     
page:      710 - 716
0.15-M Buried-Channel P-Mosfet'S With Ultrathin Boron-Doped Epitaxial Si Layer (Article)
Subject: Boron-Doped Epitaxial Si , Buried Channel , P-Mosfet
Author: Tatsuya Ohguro      Kouji Usuda      Hisaya Sasaki Momose     
page:      717 - 721
Advanced Ic Packaging For The Furure Applications (Article)
Subject: Ball Grid Arrays , Chip Scale Package , Packaging
Author: Ichiro Anjoh      A Nishimura      Shuji Eguchi     
page:      743 - 752